Ferroelectric-Gate Field Effect Transistor Memories - Device Physics and Applications
- Författare
- (Edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon.)
- Språk
- Engelska
| Förlag | År | Ort | Om boken | ISBN |
|---|---|---|---|---|
| Springer Singapore, Imprint: Springer | 2020 | Singapore, Singapore | XIV, 425 sidor. 313 illus., 183 illus. in color. online resource. | 978-981-15-1212-4 |
| Springer Netherlands, Imprint: Springer | 2016 | Nederländerna, Dordrecht | XVIII, 347 sidor. 254 illus., 150 illus. in color. online resource. | 978-94-024-0841-6 |